logo

Select Sidearea

Populate the sidearea with useful widgets. It’s simple to add images, categories, latest post, social media icon links, tag clouds, and more.
hello@youremail.com
+1234567890
 

Wafer Substrate Bonding Unit

Wafer Substrate Bonding Unit




MCF Wafer Substrate Bonding Unit
(WSBU’s) offer premium bonding for the processing of fragile semiconductor materials such as indium phosphide and gallium arsenide.
The bonding units are designed to minimise breakage with these expensive materials, whilst retaining the highest quality of sample yield. 
The WSBU’s are designed to meet the stringent requirements of todays wafer processes. Available as a single or three station unit, this highly automated bonder incorporates both vacuum and pressure bonding facilities.
 


Available as a single or three station benchtop unit with a wafer process capacity of 4”/100mm or 6”/150mm - bond three part or whole wafers consistently with a high standard of support carrier parallelism.
The WSBU range allows operators to bond single or multiple wafers simultaneously.
The WSBU range provide consistent bond thickness and excellent dimensional accuracy due to precise control of a flexible diaphragm within the bonding chamber.
Process conditions set and controlled via the Graphical User Interface - including bonding temperature up to 200°C and required vacuum.
The full bonding process - evacuation of wafer chamber, heating, pressure bonding and cooling can be completed automatically by the WSBU’s in 30 minutes (depending on the mounting media, wafer size and parameter combination).
 
Single Station, benchtop WSBU with the capacity to bond 100mm (4″) wafers
Single Station, benchtop WSBU with the capacity to bond 150mm (6″) wafers
Three Station, benchtop WSBU with the capacity to bond 100mm (4″) wafers
Three Station, benchtop WSBU with the capacity to bond 150mm (6″) wafers