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TM/GD8 High&Low Tempebrature Vacuum Probe Station

TM/GD8 High&Low Tempebrature Vacuum Probe Station
Microwave Device Test Probe Station The integrated on-chip test solution designed for chip S-parameter testing provides test capabilities from DC to 67GHz frequency. Combined with the special microcavity , the imported temperature control system supports wafer temperature change test from -55°C to 300°C or room temperature to 300°C. The gold plated surface of the probe stage wafer carrier is used to ensure low contact resistance, ultra-thin wafer processing, and power dissipation during testing, while providing low leakage noise protection and shielding.


TM/GD8 High&Low Tempebrature Vacuum Probe Station
Application direction: analysis of college microelectronics teaching and research, laboratory chip failure.
Test device types: optoelectronic chips, GaN chips, RF chips, organic devices, OLEDs, etc.
Test parameters: IV, CV, S parameters, impedance parameters.


TM/GD8 High&Low Tempebrature Vacuum Probe Station
Can test Wafer size: 8 inches
Chuck XY stroke: 203.2mm*203.2mm